Electron‐Selective Contacts ATO/LiF/Al‐Based High‐Performance N‐Type Silicon Solar Cells (Adv. Mater. Interfaces 31/2022)
نویسندگان
چکیده
Silicon Solar Cells In article number 2201512, Zengguang Huang and colleagues prepared Al-doped TiO2 (ATO) thin films by atomic-layers-deposited (ALD) technique. The were observed to possess the highest minority carrier lifetime of 253.0 μs a significantly low contact resistivity ρc 19.7 mΩ cm2 on solar-grade silicon. A efficiency 19.9% was obtained for an n-type c-Si solar cell with full-area rear ATO/LiF/Al electron-selective contact.
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2022
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202270170